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PRELIMINARY
MITSUBISHI SEMICONDUCTOR
Notice: This is not a final specification. Some parametric limits are subject to change.
MGFC45V4450A
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 - 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=4.4 - 5.0 GHz High power gain GLP = 10 dB (TYP.) @ f=4.4 - 5.0GHz High power added efficiency P.A.E. = 34 % (TYP.) @ f=4.4 - 5.0GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 4.4 - 5.0 GHz band power amplifier item 51 : 4.4 - 5.0 GHz band digital ratio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V) ID = 8 (A) RG=25 (ohm)
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID IGR IGF PT *1 Tch Tstg *1 : Tc=25deg.C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature
(Ta=25deg.C) Ratings -15 -15 20 -80 168 150 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. IM3 *2
Rth(ch-c) *3
(Ta=25deg.C) Test conditions Min. VDS = 3V , VGS = 0V VDS = 3V , ID = 8A VDS = 3V , ID = 160mA -2 44 VDS=10V, ID(RF off)=8A, f=4.4 - 5.0GHz 9 -42 delta Vf method Limits Typ. 24 8 45 10 8 34 -45 0.8 Unit Max. -5 1 A S V dBm dB A % dBc
deg.C/W
Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=4.4,3.5,5.0GHz,delta f=10MHz *3 : Channel-case
MITSUBISHI ELECTRIC
Feb. 1999
PRELIMINARY
MITSUBISHI SEMICONDUCTOR
Notice: This is not a final specification. Some parametric limits are subject to change.
MGFC45V4450A
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS
P1dB,GLP vs. f 47 VDS=10V IDS=8A
P1dB
Po, P.A.E. vs. Pin
20
50 VDS=10V IDS=8A f=4.7GHz Po 40
100
OUTPUT POWER P1dB (dBm)
LINEAR POWER GAIN GLP (dB)
45
16
60
44
14
35
43
GLP
12
add
40
42
10
30
20
41 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5 5.1 FREQUENCY f (GHz)
8
25 20 25 30 35 40 INPUT POWER Pin (dBm)
0
Po,IM3 vs. Pin 38 36 34 32 30 28 26 24 17 19 21 23 25 27 29 INPUT POWER Pin (dBm S.C.L.)
( Ta=25deg.C , VDS=10(V),IDS=8(A) ) S-Parameter (TYP.)
VDS=10V IDS=8A f1=5.00GHz f2=5.01GHz 2-tone test
0 -10 Po -20 -30 IM3 -40 -50 -60 -70 31
OUTPUT POWER Po (dBm S.C.L.)
S parameters
f (GHz) 4.4 4.5 4.6 4.7 4.8 4.9 5.0
S11 Magn. 0.58 0.59 0.58 0.59 0.56 0.54 0.50 Angle(deg.) -132 -163 171 151 134 120 111 Magn. 0.04 0.04 0.05 0.05 0.05 0.05 0.06
S21 Angle(deg.) 2 -21 -52 -67 -94 -112 -129 Magn. 2.881 2.936 2.865 2.782 2.670 2.628 2.528
IM3 (dBc)
S12 Angle(deg.) 54 31 8 -12 -32 -51 -70 Magn. 0.30 0.23 0.16 0.18 0.24 0.32 0.38
S22 Angle(deg.) -56 -82 -125 -170 160 138 125
MITSUBISHI ELECTRIC
Feb. 1999
POWER ADDED EFFICIENCY (%)
46
18
OUTPUT POWER Po (dBm)
45
80

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